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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC1163
DESCRIPTION *With TO-126 package *High power dissipation APPLICATIONS *Useful for high-voltage general purpose applications *Suitable for transformerless ,line-operated equipment
PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION
Absolute Maximun Ratings (Ta=25? )
SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25? Open emitter Open base Open collector CONDITIONS VALUE 300 300 4 0.1 20.8 150 -65~150 UNIT V V V A W ? ?
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 6.25 UNIT ? /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC1163
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=1.0mA;IB=0
300
V
V(BR)CBO
Collector-base breakdown voltage
IC=100A;IE=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=100A;IC=0
4
V
VCEsat
Collector-emitter saturation voltage
IC=50mA ;IB=5mA
1.0
V
VBEsat
Base-emitter saturation voltage
IC=50mA ;IB=5mA
1.5
V
ICBO
Collector cut-off current
VCB=200V; IE=0
10
A
IEBO
Emitter cut-off current
VEB=3V; IC=0
10
A
hFE
DC current gain
IC=50mA ; VCE=10V
30
240
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC1163
Fig.2 Outline dimensions
3


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